unisonic technologies co., ltd 5N50K power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-870.a 5a, 500v n-channel power mosfet ? description the utc 5N50K is an n-channel power mosfet adopting utc?s advanced technology to provide customers with dmos, planar stripe technology. this technology is designed to meet the requirements of the minimum on- state resistance and perfect switching performance. it also can withstand high energy pulse in the avalanche and communication mode. the utc 5N50K can be used in applications, such as active power factor correction, high efficiency switched mode power supplies, electronic lamp ballast s based on half bridge topology. ? features * r ds(on) = 1.4 ? @v gs = 10 v * 100% avalanche tested * high switching speed ? symbol 1.gate 3.source 2.drain to-220f 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 5N50Kl-tf3-t 5N50Kg-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
5N50K power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-870.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v drain current continuous i d 5 a pulsed (note 2) i dm 20 a avalanche current (note 2) i ar 5 a avalanche energy single pulsed (note 3) e as 270 mj repetitive (note 2) e ar 7.3 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation p d 38 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l = 21.5mh, i as = 5.2a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 5a, di/dt 200a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 3.25 c/w
5N50K power mosfet www.unisonic.com.tw 3 of 6 copyright ? 2010 unisonic technologies co., ltd ver.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 500 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =250a 0.5 v/c drain-source leakage current i dss v ds =500v, v gs =0v 1 a v ds =400v, t c =125c 10 gate- source leakage current forward i gss v gs =30v, v ds =0v 100 na reverse v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =2.5a 1.2 1.4 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 480 625 pf output capacitance c oss 80 105 pf reverse transfer capacitance c rss 15 20 pf switching parameters total gate charge q g v gs =10v, v ds =400v, i d =5a (note 1, 2) 18 24 nc gate to source charge q gs 2.2 nc gate to drain charge q gd 9.7 nc turn-on delay time t d ( on ) v dd =250v, i d =5a, r g =25 ? (note 1, 2) 12 35 ns rise time t r 46 100 ns turn-off delay time t d ( off ) 50 110 ns fall-time t f 48 105 ns source- drain diode ratings and characteristics maximum continuous drain-source diode forward current i s 5 a maximum pulsed drain-source diode forward current i sm 20 a drain-source diode forward voltage v sd i s =5a, v gs =0v 1.4 v reverse recovery time t r r i s =5a, v gs =0v, di f /dt=100a/s (note 1) 263 ns reverse recovery charge q rr 1.9 c note: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
5N50K power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-870.a ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g v gs v gs 200nf same type as dut 3ma gate charge test circuit gate charge waveforms resistive switching test circui t resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
5N50K power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-870.a ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver peak diode recovery dv/dt test circuit & waveforms v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current
5N50K power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-870.a ? typical characteristics drain current vs. drain-source breakdown voltage drain current, i d (a) drain-source breakdown voltage, bv dss (v) 0.5 0 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 1.5 2 3.5 13 0 50 100 150 200 250 300 0 100 300 500 600 200 0 50 100 150 200 250 300 400 2.5 drain current, i d (a) drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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